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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N3715/3716 DESCRIPTION *DC Current Gain: hFE= 50-150@IC= 1A *Wide Area of Safe Operation *Low Collector Saturation Voltage: VCE(sat)= 0.8V(Max.)@ IC= 5A *Complement to Type 2N3791/3792 APPLICATIONS *Designed for medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER 2N3715 VCBO Collector-Base Voltage 2N3716 2N3715 VCEO Collector-Emitter Voltage 2N3716 VEBO IC IB PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Base Current Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature 80 7 10 4 150 200 -65~200 V A A W 100 60 V VALUE 80 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.17 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2N3715/3716 TYP. MAX UNIT 2N3715 VCEO(SUS) Collector-Emitter Sustaining Voltage 2N3716 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage IC= 5A; IB= 0.5A IC= 5A; IB= 0.5A IC= 3A ; VCE= 2V 2N3715 ICEX Collector Cutoff Current 2N3716 IEBO hFE-1 hFE-2 fT Emitter Cutoff Current DC Current Gain DC Current Gain VCE= 100V; VBE(off)= -1.5V VCE= 80V; VBE(off)= -1.5V, TC=150 VEB= 7V; IC= 0 IC= 1A ; VCE= 2V IC= 3A ; VCE= 2V VCE= 80V; VBE(off)= -1.5V VCE= 60V; VBE(off)= -1.5V, TC=150 IC= 200mA ; IB= 0 60 V 80 0.8 1.5 1.5 1.0 10 mA 1.0 10 5.0 50 30 150 mA V V V VCE(sat) VBE(sat) VBE(on) Current-Gain--Bandwidth Product IC= 0.5A ; VCE= 10V ;ftest= 1.0MHz 4 MHz Switching Times Rise Time Storage Time Fall Time IC= 5A; IB1= -IB2= 0.5A 0.45 0.3 0.4 s s s tr tstg tf isc Websitewww.iscsemi.cn 2 |
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